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Fundamentals of Modern VLSI Devices

Af: Tak H. Ning, Yuan Taur Engelsk Hardback

Fundamentals of Modern VLSI Devices

Af: Tak H. Ning, Yuan Taur Engelsk Hardback
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A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
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Tjek vores konkurrenters priser
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
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Produktdetaljer
Sprog: Engelsk
Sider: 622
ISBN-13: 9781108480024
Indbinding: Hardback
Udgave:
ISBN-10: 1108480020
Kategori: Kondenserede fasers fysik: væskeform og faststoffysik
Udg. Dato: 2 dec 2021
Længde: 34mm
Bredde: 252mm
Højde: 177mm
Forlag: Cambridge University Press
Oplagsdato: 2 dec 2021
Forfatter(e): Tak H. Ning, Yuan Taur
Forfatter(e) Tak H. Ning, Yuan Taur

Kategori Kondenserede fasers fysik: væskeform og faststoffysik

ISBN-13 9781108480024

Sprog Engelsk

Indbinding Hardback

Sider 622

Udgave

Længde 34mm

Bredde 252mm

Højde 177mm

Udg. Dato 2 dec 2021

Oplagsdato 2 dec 2021

Forlag Cambridge University Press