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Spintronics

- A Review and Directions for Research
Engelsk Paperback

Spintronics

- A Review and Directions for Research
Engelsk Paperback
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This compilation first presents a brief literature overview of ferromagnetism in zinc oxide, as well as a survey on ion implantation and irradiation-mediated ferromagnetism. The authors highlight the intrinsic and extrinsic origins of ferromagnetism in 200 KeV Ni+2 ion implanted ZnO (Ni: ZnO)/undoped ZnO. The authors also discusse spin dynamics studies that have been carried out on graphene-based derivatives such as graphene-like nano carbon, nitrogen derivative graphene-like nano carbo, reduced graphene oxide and tellurium-incorporated reduced-graphene oxide for using electron spin resonance. Lastly, Spintronics: A Review and Directions for Research establishes the inducing of spintronic behaviour in a semiconductor-based multiferroic material, BiFeO3, through the site-engineering approach. The unique electronic band structure of a spintronic material with 100% spin polarization impacts the electron transport mechanism significantly, with an increase in the efficiency in the performance of memory storage devices.
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This compilation first presents a brief literature overview of ferromagnetism in zinc oxide, as well as a survey on ion implantation and irradiation-mediated ferromagnetism. The authors highlight the intrinsic and extrinsic origins of ferromagnetism in 200 KeV Ni+2 ion implanted ZnO (Ni: ZnO)/undoped ZnO. The authors also discusse spin dynamics studies that have been carried out on graphene-based derivatives such as graphene-like nano carbon, nitrogen derivative graphene-like nano carbo, reduced graphene oxide and tellurium-incorporated reduced-graphene oxide for using electron spin resonance. Lastly, Spintronics: A Review and Directions for Research establishes the inducing of spintronic behaviour in a semiconductor-based multiferroic material, BiFeO3, through the site-engineering approach. The unique electronic band structure of a spintronic material with 100% spin polarization impacts the electron transport mechanism significantly, with an increase in the efficiency in the performance of memory storage devices.
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Produktdetaljer
Sprog: Engelsk
Sider: 196
ISBN-13: 9781536145267
Indbinding: Paperback
Udgave:
ISBN-10: 1536145262
Kategori: Fysik
Udg. Dato: 27 sep 2019
Længde: 14mm
Bredde: 230mm
Højde: 153mm
Forlag: Nova Science Publishers Inc
Oplagsdato: 27 sep 2019
Forfatter(e):
Forfatter(e)

Kategori Fysik

ISBN-13 9781536145267

Sprog Engelsk

Indbinding Paperback

Sider 196

Udgave

Længde 14mm

Bredde 230mm

Højde 153mm

Udg. Dato 27 sep 2019

Oplagsdato 27 sep 2019

Forlag Nova Science Publishers Inc