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Radiation Defect Engineering
Engelsk Hardback
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Radiation Defect Engineering
Engelsk Hardback

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Om denne bog
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Product detaljer
Sprog:
Engelsk
Sider:
264
ISBN-13:
9789812565211
Indbinding:
Hardback
Udgave:
ISBN-10:
9812565213
Udg. Dato:
21 nov 2005
Længde:
22mm
Bredde:
167mm
Højde:
254mm
Forlag:
World Scientific Publishing Co Pte Ltd
Oplagsdato:
21 nov 2005
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